1 these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. n & p-channel 20-v (d-s) mosfet ? low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe tsop-6 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol n-channe l p-channe l units v ds 20 -20 v gs 12 12 t a =25 o c 3.7 -2.7 t a =70 o c 2.9 -2.1 i dm 8 -8 i s 1.05 -1.05 a t a =25 o c t a =70 o c t j , t stg o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w 1.15 0.7 -55 to 150 typ max typ max t <= 10 sec 93 110 93 110 steady state 130 150 130 150 maximum junction-to-ambient a o c/w unit p-channel n-channel r thja thermal resistance ratings parameter symbol s 2 d 2 g 2 p-channel mosfet d 1 s 1 g 1 n-channel mosfet tsop-6 top view d1 s1 d2 g1 s2 g2 1 2 3 6 5 4 v ds (v) r ds(on) ( ) i d (a) 0.058 @ v gs = 4.5v 3.7 0.082 @ v gs = 2.5v 3.1 0.160 @ v gs = 1.8v 2.2 0.112 @ v gs = -4.5v -2.7 0.172 @ v gs = -2.5v -2.2 0.210 @ v gs = -1.8v -2.0 20 product summary -20 freescale www.freescale.net.cn ao6 6 04 / mc6 6 04
2 notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. ch min typ max v gs = v ds , i d = 250 ua n 1 v gs = v ds , i d = -250 ua p -1 v ds = 0 v, v gs = 12 v n 100 v ds = 0 v, v gs = -12 v p -100 v ds = 16 v, v gs = 0 v n 1 v ds = -16 v, v gs = 0 v p -1 v ds = 16 v, v gs = 0 v, t j = 55 o c n 10 v ds = -16 v, v gs = 0 v, t j = 55 o c p -10 v ds = 5 v, v gs = 4.5 v n 5 v ds = -5 v, v gs = -4.5 v p -5 v gs = 4.5 v, i d = 3.7 a n 0.058 v gs = -4.5 v, i d = 3.1 a p 0.112 v gs = 2.5 v, i d = 2.7 a n 0.082 v gs = -2.5 v, i d = -2.2 a p 0.172 v gs = 1.8 v, i d = 2.2 a n 0.160 v gs = -1.8 v, i d = -2.0 a p 0.210 v ds = 5 v, i d = 3.7 a n 10 v ds = -5 v, i d = 3.1 a p 5 i s = 1.05 a, v gs = 0 v n 0.80 i s = -1.05 a, v gs = 0 v p -0.83 n 7.5 p 3.8 n 0.6 p 0.6 n 1.0 p 1.5 n 5 p 5 n 12 p 15 n 13 p 20 n 7 p 20 forward tranconductance a g fs s gate-source charge q gs a drain-source on-resistance a r ds(on) ns n-chaneel v dd =15v, v gs =4.5v, i d =1a , r gen =15 , p-channel v dd =-15v, v gs =-4.5v, i d =-1a r gen =15 fall-time t f turn-off delay time t d(on) t r t d(off) turn-on delay time rise time limits i dss unit on-state drain current a i d(on) i gss ua ua zero gate voltage drain current specifications (t a = 25 o c unless otherwise noted) ua static test conditions v symbol parameter gate-body leakage current gate-threshold voltage v gs(th) s nc gate-drain charge q gd dynamic b n-channel v ds =15v, v gs =4.5v, i d =2.7a p-channel v ds =-15v, v gs =-4.5v, i d =-3.1a diode forward voltage a v sd total gate charge q g freescale www.freescale.net.cn ao6 6 04 / mc6 6 04 freescale reserves the right to make changes without further notic e to any products herein. freescale makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor doesfreescale assume any liability arising ou t of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, conseque ntial or incidental damages. ?typical? parameters which may be provided infreescale data sheet s and/or specifications can a nd do vary in different appli cations and actual performance may vary over time. all operating parameters , including ?typicals? must be validated for each customer appl ication by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescaleproducts are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications int ended to support or sustain life, or for any other application in which the failure of the freescale product could create a situation where personal inju ry or death may occur. should buyer purchase or use freescale products for any such uninte nded or unauthorized application, buyer shall indemnify and hold freescale and its officers, employees, subsidiari es, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirect ly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that freescale was negligent regarding the design or m anufacture of the part. freescale is an equal opportunity/affirmative action employer.
3 typical electrical characteristics (n-channel) output characteristics transfer characteristics on-resistance vs. junction temperature gate charge capacitance on-resistance vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 0 2 4 6 8 10 12 i d - drain current (a) r ds(on) - normalized on-resistance 4.5v 2.5v 0 2 4 6 8 10 12 0 1 2 3 v ds - drain-to-source voltage (v) i d - drain current (a) v gs = 4.5v 2.0v 2.5v 0 2 4 6 8 10 0.5 1 1.5 2 2.5 3 v gs - gate-to-source voltage (v) i d - drain current (a) t a = -55 o c 25 o c 125 o c 0 50 100 150 200 250 300 350 400 450 0 5 10 15 20 v ds - drain-to-source voltage (v) c - capacitance (pf) c iss c oss c rss 0 2 4 6 8 10 0 2 4 6 8 q g, gate c harge ( nc ) vgs voltage ( v ) 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j - junction tempertaure ( o c) r ds(on) - on-resistance (normalized) v gs = 4.5v freescale www.freescale.net.cn ao6 6 04 / mc6 6 04
4 typical electrical characteristics (n-channel) normalized thermal transient impedance, junction-to-ambi ent single pulse power threshold voltage source-drain diode forward voltage on-resistance vs. gate-to source voltage 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd, - source-to-drain voltage (v) i s - source current (a) t a = 125 o c 25 o c 0.02 0.06 0.1 0.14 0.18 0.22 1 2 3 4 5 v gs - gate-to-source voltage (v) r ds(on) - on-resistance (ohm) 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t j - temperature ( o c) v gs(th) , variance (v) i d = 250 a 0 2 4 6 8 10 0.01 0.1 1 10 100 1000 time (sec) power (w) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 square wave pulse duration (sec) normailized effective transient thermal impedance r ja (t) = r(t) + r ja r ja = 130 o c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 freescale www.freescale.net.cn ao6 6 04 / mc6 6 04
5 typical electrical characteristics (p-channel) output characteristics transfer characteristics on-resistance vs. junction temperature gate charge capacitance on-resistance vs. drain current 0 1 2 3 4 5 6 0 0.5 1 1.5 2 2.5 v ds - drain-to-soruce voltage (v) i d - drain current (a) -2.5v -2.0v -1.8v v gs =- 4.5v 0 1 2 3 4 5 0.5 1 1.5 2 2.5 3 v gs - gate-to-source voltage (v) i d - drain current (a) t a = -55 o c 125 o c 25 o c 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 0 1 2 3 4 5 6 i d - drain current (a) r ds(on) - normalized on-resistance -4.5v -2.5v 0 100 200 300 400 500 600 0 5 10 15 20 v ds - drain-to- source voltage (v) c - capacitance (pf) c iss c rss c oss -10 -8 -6 -4 -2 0 0 3 6 9 12 15 qg, charge (nc) vgs voltage ( v ) 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j - junction temperature ( o c) r ds(on) , - on-resistance (normalized) v gs = -4.5v freescale www.freescale.net.cn ao6 6 04 / mc6 6 04
6 typical electrical characteristics (p-channel) normalized thermal transient impedance, junction-to-ambi ent single pulse power threshold voltage source-drain diode forward voltage on-resistance vs. gate-to source voltage 0 2 4 6 8 10 0.01 0.1 1 10 100 1000 time (sec) power (w) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 square wave pulse duration (sec) normailized effective transient thermal impedance r ja (t) = r(t) + r ja r ja = 130 o c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd - source-to-drain voltage (v) i s - source current (a) t a = 125 o c 25 o c 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 1 2 3 4 5 v gs - gate-to-source voltage (v) r ds(on) - on-resistance (ohm) 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 t j , - temperature ( o c) v gs(th) variance (v) i d =- 250 a freescale www.freescale.net.cn ao6 6 04 / mc6 6 04
7 package information tsop-6: 6lead freescale www.freescale.net.cn ao6 6 04 / mc6 6 04
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